Optical properties of remotely doped AlAs/GaAs coupled quantum wire arrays. I. Periodic quantum confinement and localization of minority carriers - art. no. 195302

摘要

We perform low-temperature optical experiments on remotely doped lateral superlattices epitaxially grown on vicinal GaAs substrates. This quantum wire system provides a degenerate electron gas of density n(s)similar or equal to8x10(11) cm(-2) subjected to a tunable one-dimensional periodic potential of amplitude similar or equal to20 meV and period similar or equal to30 nm, i.e., at the scale of its Fermi energy (E(F)similar or equal to25 meV) and Fermi wavelength (lambda(F)similar or equal to30 nm). We show that the one-dimensional quantum confinement strongly affects both photoluminescence and photoluminescence excitation properties of the degenerate electron system. Through a careful analysis of the optical emission and absorption linear polarization spectra together with their temperature dependence, we distinguish between features due to (i) the periodic one-dimensional confinement and (ii) the localization anisotropy of photocreated valence-band carriers. [References: 31]