Phonon drag in ballistic quantum wires in the nonlinear regime - art. no. 115417

摘要

The acoustic phonon-mediated contribution to the drag current in the ballistic transport regime in two nearby one-dimensional nanowires is calculated. In the nonlinear regime, where the applied bias voltage eV is greater than the temperature T, the threshold of the phonon-mediated drag current with respect to bias or gate voltage is predicted. It is found that the drag current contribution from any two aligned subbands in the drive and drag wires saturates at large bias (driving) voltage. [References: 19]