Infrared absorption in Si/Si1-xGex/Si quantum wells - art. no. 085329

摘要

The infrared intersubband optical transitions in SiGe/Si quantum wells is theoretically examined. We have used the 8 x 8, 12 x 12, and 14 x 14 k. p Hamiltonians taking into account both the p-like first conduction band and the s-like second conduction band to calculate wave functions and energy dispersion of the valence band of Si/Si0.8Ge0.2/Si quantum wells. We discuss intersubband absorption in the valence band and we show that the p-p interaction favors intersubband transitions for an optical polarization parallel to the layer plane (x polarization). For z polarization, both s-p and p-p interactions play the same footing role in intervalence band transitions. [References: 43]