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Unusual magnetic and superconducting characteristics in multilayered high-T-c cuprates: Cu-63 NMR study - art. no. 064515

机译:多层高T-c铜酸盐中异常的磁性和超导特性:Cu-63 NMR研究-艺术。没有。 064515

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We report unusual magnetic and superconducting (SC) characteristics in multilayered CuO2 planes in Hg- and Cu-based high-T-c cuprates through the Cu-63-NMR measurements. These compounds, in which the number of CuO2 planes (n) ranges from 3 to 5 in a unit cell, include crystallographically inequivalent outer (OP) and inner (IP) CuO2 plane that are surrounded by pyramidal and square oxygen, respectively. The Knight shift (K-63) at the OP and IP exhibits respective characteristic temperature dependence, consistent with its own doping level. Using an experimental relation between the spin part in K-63 at room temperature, and the doping level in a CuO2 layer N-h, we show that N-h,(OP) at the OP is larger than Nh(IP) at the IP for all the systems and its difference DeltaN(h)=N-h(OP) -N-h(IP) increases as either a total carrier content delta or n increases. At DeltaN(h)'s exceeding a critical value, the pseudogap behavior in the normal state is seen alone at the IP. and a bulk SC transition does not set in simultaneously at the IP and OP. A SC nature at the OP becomes consistent with a mean-field behavior only below T-c2 that is significantly lower than T-c. Reduction in T-c with increasing n is associated with an increase in DeltaN(h). It is a rather remarkable aspect that a T-c is not always reduced even though these multilayered high-T-c compounds are heavily overdoped. This arises, we show, because the IP remains underdoped and keeps a high value of T-c, while the OP is predominantly overdoped. This may be a microscopic origin for the lowest anisotropic SC characteristics reported to date in Cu-based multilayered high-T-c compounds. [References: 26]
机译:我们通过Cu-63-NMR测量报告了在基于Hg和Cu的高T-c铜酸盐中的多层CuO2平面中的异常磁和超导(SC)特性。这些化合物在晶胞中的CuO2平面数(n)在3到5之间,它们的结晶不等价的外部(OP)和内部(IP)CuO2平面分别被金字塔形和方形氧包围。 OP和IP处的Knight位移(K-63)表现出各自的温度依赖性,与其自身的掺杂水平一致。利用室温下K-63中的自旋部分与CuO2层Nh中的掺杂水平之间的实验关系,我们发现,对于所有的晶体,OP处的Nh,(OP)大于IP处的Nh(IP)。系统及其差值DeltaN(h)= Nh(OP)-Nh(IP)随着总载波含量增量或n的增加而增加。在DeltaN(h)超过临界值时,仅在IP处可以看到正常状态下的伪间隙行为。 IP和OP不会同时设置批量SC转换。 OP处的SC性质仅与低于T-c的T-c2下的平均场行为一致。随着n的增加,T-c的减少与DeltaN(h)的增加有关。一个非常显着的方面是,即使这些多层的高T-c化合物严重过量掺杂,T-c也不总是减少。我们证明,出现这种情况是因为IP仍然掺杂不足,并保持了较高的T-c值,而OP主要是过量掺杂。这可能是迄今报道的基于铜的多层高T-c化合物中最低的各向异性SC特性的微观来源。 [参考:26]

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