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Temperature-dependent valence-band photoemission study of UNiSn - art. no. 085101

机译:UNiSn的温度依赖性价带光发射研究-艺术没有。 085101

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The electronic structure of UNiSn has been investigated using photoemission spectroscopy (PES). The U 5f partial spectral weight (PSW) exhibits a broad peak centered at approximate to0.3 eV below E-F. The Ni 3d PSW shows the main peak well below E-F and a very low density of states (DOS) at E-F. The h nu dependence of the valence-band spectrum reveals a dominant U 5f electron character for the states near the Fermi level E-F, with a small contribution from the U 6d, Ni 3d, and Sn sp states. Comparison of the measured PES spectra to the LSDA+ U band structure calculation indicates the importance of the on-site Coulomb interaction between U 5f electrons in UNiSn. The high-resolution photoemission spectrum of UNiSn is described well by a V-shaped metallic DOS near E-F, suggesting a finite but reduced DOS at E-F. A possible origin for the reduced DOS at E-F might be the hybridization of the U 5f states to the Ni 3d states that have a very low DOS at E-F. T-dependent high-resolution PES for UNiSn reveals a finite DOS at E-F even above T-N. [References: 29]
机译:UNiSn的电子结构已使用光发射光谱(PES)进行了研究。 U 5f部分光谱权重(PSW)表现出一个宽峰,中心位于比E-F低约0.3 eV的位置。 Ni 3d PSW显示的主峰远低于E-F,E-F处的态密度(DOS)非常低。价带谱的h nu依赖性揭示了费米能级E-F附近状态的显性U 5f电子特征,而U 6d,Ni 3d和Sn sp态贡献很小。将测得的PES光谱与LSDA + U带结构计算进行比较表明,UNiSn中U 5f电子之间现场库仑相互作用的重要性。 UNiSn的高分辨率光发射光谱可以通过E-F附近的V形金属DOS很好地描述,这表明在E-F处有一个有限但减少的DOS。 E-F处DOS降低的可能原因可能是U 5f状态与E-F处DOS极低的Ni 3d状态的杂交。 UNiSn的依赖T的高分辨率PES在E-F处显示出甚至在T-N以上的有限DOS。 [参考:29]

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