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Coulomb blockade related to mutual Coulomb interaction in an external environment in an array of single tunnel junctions connected to Ni nanowires

机译:与外部环境中与镍纳米线相连的单个隧道结阵列中的相互库仑相互作用有关的库仑封锁

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摘要

The Coulomb blockade (CB), which depends on the mutual Coulomb interaction (MCI) in external electromagnetic environments (EME's), is reported in an array system of single tunnel junctions connected directly to disordered Ni nanowires (i.e., an array of a disordered Ni nanowire/Al2O3/Al system located in parallel), fabricated using a nanoporous Al film template. The observed zero-bias conductance (G(0)) anomaly and its linear G(0) versus temperature relation qualitatively agree with the CB observations of Zeller and Giaever and of Cleland, Schmidt, and Clarke. The CB is also quantitatively confirmed from the extended Zeller-Giaever model in a tunnel-junction array. In the high-voltage region, only one-dimensional (1D) MCI following the Altshuler-Aronov formula in a disordered Ni wire dominates the conductance mechanism with the absence of the CB. In contrast, in the lower-voltage region, the CB mentioned above emerges at temperatures below a phase-transition temperature (T-c), accompanied by the 1D MCI in the Ni wire. The MCI plays the key roles of high-impedance EME and transmission line following the phase correlation theory of the CB. It is found that the CB is very sensitive to the diffusion coefficient (D) of the MCI, resulting in the linear T-c-vs-D-1/2 relation. For this relation, we propose as one possible model, that the charging energy of the CB competes with the energy quantum of fluctuation of the Nyquist phase breaking caused by multiple Coulomb scattering in the Ni nanowire. This linear T-c-vs-D-1/2 relation is reconfirmed by the Ni-wire diameter dependence of T-c. The magnetic field dependence of the G(0)-versus-temperature relation obviously supports the actual presence of T-c with different conductance mechanisms for the temperatures above and below T-c. [References: 21]
机译:在外部电磁环境(EME)中依赖于相互库仑相互作用(MCI)的库仑封锁(CB),是在直接连接到无序Ni纳米线(即无序Ni纳米阵列)的单隧道结阵列系统中报告纳米线/ Al2O3 / Al系统平行放置),使用纳米多孔Al膜模板制作而成。观测到的零偏电导(G(0))异常及其线性G(0)与温度的关系在质量上与Zeller和Giaever以及Cleland,Schmidt和Clarke的CB观测结果一致。还可以从扩展的Zeller-Giaever模型以隧道结阵列的形式定量确认CB。在高压区域中,在无CB的情况下,只有遵循无序Ni导线中Altshuler-Aronov公式的一维(1D)MCI才占主导地位。相反,在较低电压区域中,上述CB出现在相变温度(T-c)以下的温度下,并伴随着Ni导线中的1D MCI。 MCI遵循CB的相位相关理论,起着高阻抗EME和传输线的关键作用。发现CB对MCI的扩散系数(D)非常敏感,从而导致线性T-c-vs-D-1 / 2关系。对于这种关系,我们提出了一种可能的模型,即CB的充电能量与Ni纳米线中多次库仑散射引起的奈奎斯特相变波动的能量量子竞争。这种线性的T-c-vs-D-1 / 2关系通过T-c的镍丝直径依赖性得到了证实。 G(0)-温度关系的磁场依赖性显然支持T-c的实际存在,对于T-c之上和之下的温度具有不同的电导机理。 [参考:21]

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