...
首页> 外文期刊>Physical Review, B. Condensed Matter >Implementation of the projector augmented-wave LDA+U method: Application to the electronic structure of NiO
【24h】

Implementation of the projector augmented-wave LDA+U method: Application to the electronic structure of NiO

机译:投影机增强波LDA + U方法的实现:在NiO的电子结构中的应用

获取原文
获取原文并翻译 | 示例

摘要

The so-called local-density approximation (LDA) plus the multiorbital mean-field Hubbard model (LDA+U) has been implemented within the all-electron projector augmented-wave method, and then used to compute the insulating antiferromagnetic ground state of NiO and its optical properties. The electronic and optical properties have been investigated as a function of the Coulomb repulsion parameter U. We find that the value obtained from constrained LDA (U=8 eV) is not the best possible choice, whereas an intermediate value (U=5 eV) reproduces the experimental magnetic moment and optical properties satisfactorily. At intermediate U, the nature of the band gap is a mixture of charge transfer and Mott-Hubbard type, and becomes almost purely of the charge-transfer type at higher values of U. This is due to the enhancement of the oxygen 2p states near the top of the valence states with increasing U value. [References: 57]
机译:所谓的局部密度近似(LDA)加上多轨道平均场Hubbard模型(LDA + U)已在全电子投影仪增强波方法中实现,然后用于计算NiO的绝缘反铁磁基态及其光学特性。已经研究了电子和光学性质与库仑排斥参数U的函数关系。我们发现,从受约束的LDA(U = 8 eV)获得的值不是最佳选择,而从中间值(U = 5 eV)令人满意地再现了实验的磁矩和光学特性。在中间U处,带隙的性质是电荷转移和Mott-Hubbard型的混合,并且在U值较高时几乎变成纯粹的电荷转移型。这是由于附近的氧2p态增强价的顶部表示U值增加。 [参考:57]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号