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Engineering Electronic Structure and Band Alignment of 2D Mg(OH)2 via Anion Doping for Photocatalytic Applications

机译:通过阴离子掺杂进行光催化应用的工程电子结构和2D mg(OH)2的带对准

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摘要

The wide bandgap of 2D Mg(OH)2 inhibits its applications in visible-light photocatalytic applications. Besides, its mismatched band alignment to the redox potential of O2/H2O, brings about low efficacy of water-splitting performance. Therefore, to release the powder of 2D Mg(OH)2 in photocatalytic research, we explore anion doping strategies to engineer its electronic structure. Here, anion doping effects on electronic properties of 2D Mg(OH)2 are investigated by using DFT calculations for seven dopants (F, Cl, S, N, P, SO4, and PO4). We found (1) S, N and P doping remarkably reduces its band gap from 4.82 eV to 3.86 eV, 3.79 eV and 2.69 eV, respectively; (2) the band gap reduction is induced by the electron transfer to the dopant atoms; (3) F, Cl, SO4, and PO4 doping shifts its valence band to be lower than the oxidation potential of O2/H2O to render its band structure appropriate for photocatalytic water splitting. These results suggest that not only electrical conductivity of 2D Mg(OH)2 can be increased but also their band structure be aligned by using the proposed anion doping strategy. These results enable a new photocatalytic materials design approach while offering exciting possibilities in applications of high-current electrolysis, chemical gas sensing, and photocatalysis.
机译:2D mg(OH)2的宽带隙抑制了可见光光催化应用中的应用。此外,其与O2 / H2O的氧化还原电位的错配合对准,带来了水分裂性能的低功效。因此,为了在光催化研究中释放2D mg(OH)2的粉末,我们探讨了工程师电子结构的阴离子掺杂策略。这里,通过使用七掺杂剂(F,Cl,S,N,P,SO4和PO4)的DFT计算研究了对2D mg(OH)2的电子性质的阴离子掺杂效应。我们发现(1)S,N和P掺杂显着降低了4.82 eV至3.86eV,3.79eV和2.69eV的3.86 ev的频段缩放; (2)通过电子转移到掺杂剂原子诱导带隙降低; (3)F,Cl,SO4和PO4掺杂使其价带低于O2 / H2O的氧化电位,以使其适合于光催化水分裂的带结构。这些结果表明,不仅可以增加2D mg(OH)2的电导率,而且还通过使用所提出的阴离子掺杂策略对齐它们的带结构。这些结果使新的光催化材料设计方法能够在高电流电解,化学气体传感和光催化的应用中提供令人兴奋的可能性。

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