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Low-frequency impedance of quantized Hall conductors

机译:量化霍尔导体的低频阻抗

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The longitudinal and the Hall impedances have been measured as a function of the frequency in a two-dimensional electron gas at low temperatures. The frequency dependence of the longitudinal impedance can be explained in terms of an equivalent parallel LCR circuit. An effective inductance term arises due to the capacitive coupling between edge states and is shown to scale as 1/v(2) for different fillings factors. In the low-frequency range the relative difference between the ac and de values of the Hall impedance is found to depend quadratically on the frequency and to scale as 1/v(3). These results are shown to be consistent with the existing theoretical model based on the edge-state picture. Finally, the observed symmetry relations when exchanging current contacts or reversing magnetic field are discussed. [References: 23]
机译:已经测量了低温下二维电子气中的纵向和霍尔阻抗与频率的关系。纵向阻抗的频率依赖性可以用等效并联LCR电路来解释。有效电感项是由于边缘状态之间的电容耦合而产生的,对于不同的填充因数,它按比例缩放为1 / v(2)。在低频范围内,霍尔阻抗的ac值和de值之间的相对差被发现取决于频率,并按1 / v(3)缩放。这些结果表明与基于边缘状态图的现有理论模型是一致的。最后,讨论了在交换电流触点或反向磁场时观察到的对称关系。 [参考:23]

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