Heteroepitaxy of germanium on Si(103) and stable surfaces of germanium

摘要

Despite the Si(103) surface having been reported as having a rough morphology and a thin disordered top layer, the present scanning tunneling microscopy investigation shows that germanium may grow on Si(103) as a heteroepitaxial layer, although with its surface completely faceted. On the surface of the germanium layer eight and only eight different facets can be found: Ge(103), (105), (216), (2 - 16), (113), (1 - 13), (15 3 23), and (15 - 3 23). These are exactly the eight stable surfaces around (103) that have been reported, thus confirming that all stable germanium surfaces around (103) have already been found. Deposition of a thin layer of indium onto this highly faceted germanium surface followed by annealing may remove all the facets and make the surface consist of only Ge(103) 1 X 1-In terraces, thus showing that in the In/Ge system the territory of the (103) family extends very far in all directions: to (001), (113), and (15 3 23). [S0163-1829(99)03320-2]. [References: 34]