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首页> 外文期刊>Physical Review, B. Condensed Matter >Screening of coherent LO phonons by interwell plasmon oscillations along the growth direction in GaAs/AlGaAs superlattices
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Screening of coherent LO phonons by interwell plasmon oscillations along the growth direction in GaAs/AlGaAs superlattices

机译:GaAs / AlGaAs超晶格中沿生长方向的阱间等离子体激元振荡对相干LO声子的筛选

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摘要

We study coherent phonon oscillations in GaAs/AlGaAs superlattices and multiple quantum wells as a function of the barrier width. Strong, bulklike screened LO phonons accompany bare LO phonons for thin barrier samples, whereas for thicker barrier samples, only the bare LO phonons exist. These results strongly indicate that the coherent interwell plasmons oscillating across the barrier couple to LO phonons. The technique applied is a very sensitive way of probing the superlattice-multiple quantum well transition of collective charge oscillations. [References: 21]
机译:我们研究GaAs / AlGaAs超晶格和多个量子阱中的相干声子振荡,它是势垒宽度的函数。对于薄的势垒样品,强的,类似块状的屏蔽LO声子与裸露的LO声子一起出现,而对于较厚的势垒样品,仅存在裸露的LO声子。这些结果有力地表明,相干的阱间等离激元在势垒对上振荡与LO声子振荡。所应用的技术是探测集体电荷振荡的超晶格-多量子阱跃迁的非常灵敏的方法。 [参考:21]

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