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首页> 外文期刊>Physics Letters, A >Electronic Raman response in electron-doped cuprate superconductors
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Electronic Raman response in electron-doped cuprate superconductors

机译:掺杂电子的铜酸盐超导体中的电子拉曼响应

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摘要

The electronic Raman response in the electron-doped cuprate superconductors is studied based on the t-t'- J model. It is shown that although the domelike shape of the doping dependent peak energy in the B_(2g) symmetry is a common feature for both electron-doped and hole-doped cuprate superconductors, there are pronounced deviations from a cubic response in the B1g channel and a linear response in the B_(2g) channel for the electron-doped case in the low energies. It is also shown that these pronounced deviations are mainly caused by a nonmonotonic d-wave gap in the electron-doped cuprate superconductors.
机译:基于t-t'-J模型研究了掺杂电子的铜酸盐超导体中的电子拉曼响应。结果表明,尽管B_(2g)对称性中与掺杂有关的峰值能量的圆顶状形状对于电子掺杂和空穴掺杂的铜酸盐超导体都是共同的特征,但是在B1g通道和对于低能量电子掺杂的情况,B_(2g)通道中的线性响应。还显示出这些明显的偏差主要是由电子掺杂的铜酸盐超导体中的非单调d波间隙引起的。

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