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Growth of thick La2Zr2O7 buffer layers for coated conductors by polymer-assisted chemical solution deposition

机译:通过聚合物辅助化学溶液沉积法生长用于涂覆导体的厚La2Zr2O7缓冲层

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La2Zr2O7 (LZO) epitaxial films have been deposited on LaAlO3 (LAO) (100) single-crystal surface and bi-axially textured NiW (200) alloy substrate by polymer-assisted chemical solution deposition, and afterwards studied with XRD, SEM and AFM approaches. Highly in-plane and out-of-plane oriented, dense, smooth, crack free and with a sufficient thickness (>240 nm) LZO buffer layers have been obtained on LAO (100) single-crystal surface; The films deposited on NiW (200) alloy substrate are also found with high degree in-plane and out-of-plane texturing, good density with pin-hole-free, micro-crack-free nature and a thickness of 300 nm. Highly epitaxial 500 nm thick YBa2Cu3O7-x (YBCO) thin film exhibits the self-field critical current density (Jc) reached 1.3 MA/cm(2) at 77 K. These results demonstrate the LZO epi-films obtained with current techniques have potential to be a buffer layer for REBCO coated conductors. (C) 2015 Elsevier B.V. All rights reserved.
机译:La2Zr2O7(LZO)外延膜已通过聚合物辅助化学溶液沉积法沉积在LaAlO3(LAO)(100)单晶表面和双轴织构NiW(200)合金基底上,然后使用XRD,SEM和AFM方法进行了研究。在LAO(100)单晶表面上已获得高度面内和面外取向,致密,光滑,无裂纹且具有足够的厚度(> 240 nm)的LZO缓冲层。还发现沉积在NiW(200)合金基材上的薄膜具有高度的面内和面外纹理化,良好的密度,无针孔,无微裂纹的性质以及300 nm的厚度。高度外延的500 nm厚YBa2Cu3O7-x(YBCO)薄膜在77 K时表现出的自电场临界电流密度(Jc)达到1.3 MA / cm(2)。这些结果表明,采用电流技术获得的LZO外延膜具有潜在的应用前景。用作REBCO涂层导体的缓冲层。 (C)2015 Elsevier B.V.保留所有权利。

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