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首页> 外文期刊>Physica, C. Superconductivity and its applications >Fabrication of single domain GdBCO bulk superconductors by a new modified TSIG technique
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Fabrication of single domain GdBCO bulk superconductors by a new modified TSIG technique

机译:通过改进的TSIG技术制造单畴GdBCO体超导体

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Single domain GdBCO bulk superconductors have been fabricated with new and traditional solid phases by a top seeded infiltration and growth (TSIG) process technique. In the conventional TSIG process, three types of powders, such as Gd_2BaCuO_5, GdBa_2Cu_3O_(7-x) and Ba_3Cu_5O_8, must be prepared, but in our new modified TSIG technique, only BaCuO_2 powders are required during the fabrication of the single domain GdBCO bulk superconductors. The solid phase used in the conventional process is Gd_2BaCuO_5 instead of the solid phase (Gd_2O_3 + BaCuO_2) utilized in the new process. The liquid phase used in the conventional process is a mixture of (GdBa_2Cu_3O_(7-x) + Ba_3Cu_5O_8), and the liquid phase in the new process is a mixture of (Gd_2O_3 + 10BaCuO_2 + 6CuO). Single domain GdBCO bulk superconductors have been fabricated with the new solid and liquid phases. The levitation force of the GdBCO bulk samples fabricated by the new solid phase is 28 N, which is slightly higher than that of the samples fabricated using the conventional solid phases (26 N). The microstructure and the levitation force of the samples indicate that this new method can greatly simplify the fabrication process, introduce nanometer-sized flux centers, improve the levitation force and working efficiency, and greatly reduce the cost of fabrication of single domain GdBCO bulk superconductors by the TSIG process.
机译:单域GdBCO块状超导体已经通过顶部种子浸润和生长(TSIG)工艺技术与新的和传统的固相一起制造。在传统的TSIG工艺中,必须制备三种类型的粉末,例如Gd_2BaCuO_5,GdBa_2Cu_3O_(7-x)和Ba_3Cu_5O_8,但在我们的新改良TSIG技术中,在制造单畴GdBCO块体时仅需要BaCuO_2粉末。超导体。传统工艺中使用的固相是Gd_2BaCuO_5,而不是新工艺中使用的固相(Gd_2O_3 + BaCuO_2)。传统工艺中使用的液相是(GdBa_2Cu_3O_(7-x)+ Ba_3Cu_5O_8)的混合物,而新工艺中的液相是(Gd_2O_3 + 10BaCuO_2 + 6CuO)的混合物。单畴GdBCO块状超导体已经用新的固相和液相制备。通过新固相制备的GdBCO块状样品的悬浮力为28 N,比使用常规固相制备的样品的悬浮力(26 N)略高。样品的微观结构和悬浮力表明,该新方法可以大大简化制造过程,引入纳米级的磁通中心,提高悬浮力和工作效率,并大大降低单畴GdBCO体超导体的制造成本。 TSIG流程。

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