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Structural and electronic properties of the adsorbed and defected Cu nanowires: A density-functional theory study

机译:吸附和缺陷铜纳米线的结构和电子性质:密度泛函理论研究

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Using first-principles calculations based on density-functional theory, we systematically investigate the influence of adsorbates (CO molecule and O atom) and defects (adsorb one extra Cu atom and monovacancy) on the structural and electronic properties of Cu_(5-1)NW and Cu_(6-1)NW. For both nanowires, CO molecule prefers to adsorb on the top site, while O atom prefers to adsorb on the center site. The hybridization between the CO and Cu states is dominated by the donation-backdonation process, which leads to the formation of bonding/antibonding pairs, 5σ_b/5σ_a and 2π_b~*/2π_a~*. The larger adsorption energies, larger charge transfers to O adatom and larger decrease in quantum conductance 3G_0 for an O atom adsorbed on the Cu_5-1NW and Cu_(6-1)NW show both Cu_(5-1)NW and Cu_(6-1)NW can be used as an O sensor. Furthermore, the decrease in quantum conductance 1G_0 for a CO molecule adsorbed on the Cu_(6-1)NW also shows the Cu_(6-1)NW can be used to detect CO molecule. So we expect these results may have implications for CuNW based chemical sensing. High adsorption energy of one extra Cu atom and relatively low formation energy of a monovacancy suggest that these two types of defects are likely to occur in the fabrication of CuNWs. One extra Cu atom does not decrease the quantum conductance, while a Cu monovacancy leads to a drop of the quantum conductance.
机译:使用基于密度泛函理论的第一性原理计算,我们系统地研究了吸附物(CO分子和O原子)和缺陷(吸附一个额外的Cu原子和单空位)对Cu_(5-1)的结构和电子性能的影响NW和Cu_(6-1)NW。对于两个纳米线,CO分子都倾向于吸附在顶部位点,而O原子则倾向于吸附在中心位点。 CO和Cu状态之间的杂化主要由捐赠-捐赠过程导致,导致形成键/反键对5σ_b/5σ_a和2π_b〜* /2π_a〜*。对于吸附在Cu_5-1NW和Cu_(6-1)NW上的O原子来说,更大的吸附能,更大的电荷转移到O原子以及更大的量子电导3G_0减小都表明Cu_(5-1)NW和Cu_(6- 1)NW可用作O传感器。此外,对于吸附在Cu_(6-1)NW上的CO分子,量子电导1G_0的降低也表明Cu_(6-1)NW可用于检测CO分子。因此,我们预计这些结果可能会对基于CuNW的化学传感产生影响。一个额外的Cu原子的高吸附能和一个空位的相对较低的形成能表明,这两种类型的缺陷很可能在CuNWs的制造中发生。一个额外的Cu原子不会降低量子电导,而Cu单空位导致量子电导的下降。

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