Electroluminescence properties of In-doped Zn _2SiO _4 thin films prepared by sol-gel process

摘要

The effect of In doping on the electroluminescence (EL) properties of Zn _2SiO _4:In thin films was investigated. In-doped Zn _2SiO _4 thin films were deposited on BaTiO _3 substrates and their EL properties were characterized in this study. X-ray powder diffraction patterns of In-doped Zn _2SiO _4 powders revealed a single phase of Zn _2SiO _4 for In concentrations up to approximately 1.5 mol%, whereas a secondary phase of In _2O _3 was observed for In concentrations in the range of 2-10 mol%. The maximum luminance of thin film electroluminescent (TFEL) devices varied significantly with the amount of In doping. The highest luminance with blue emission was obtained when 2 mol% In was doped. The blue emission of In-doped Zn _2SiO _4 thin film may be related to the In substitution for Zn. The 2 mol% In-doped Zn _2SiO _4 thin film exhibited blue emission with CIE color coordinates of x=0.208 and y=0.086.