Temperature dependence of the exchange coupling in CO/SI(or Ge)/Fe trilayers

摘要

The temperature dependences of interfacial exchange coupling in Co/semiconductor (SM)/Fe trilayers (SM≡Si or Ge) with different spacer thicknesses are investigated. Only one step is found in the third (not in the first) quadrant of the hysteresis loop of the trilayers with different SM thicknesses, which is ascribed to a larger interfacial coupling strength of Co/CoGe (or Co/CoSi) than of Fe/FeGe (or Fe/FeSi). Furthermore, in comparison with Co/Ge/Fe, a smaller exchange bias field H_E and no clear step are observed in Co/Si/Fe, which may originate from the weaker interfacial coupling in this trilayer. The variation of coercivity H_C with spacer thickness at low temperatures in Co/Ge/Fe is different from that in Co/Si/Fe, indicating again the important effect of the SM layer in the trilayers.