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Controlling electronic and adiabatic isolation of quantum dots from the substrate: An ionization-energy theoretic study

机译:控制量子点从基板的电子和绝热隔离:电离能理论研究

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摘要

Recent controversy on the quantum dots dephasing mechanisms (between pure and inelastic) is reexamined by isolating the quantum dots from their substrate by using the appropriate limits of the ionization energy theory and the quantum adiabatic theorem. When the phonons in the quantum dots are isolated adiabatically from the phonons in the substrate, the elastic or pure dephasing becomes the dominant mechanism. On the other hand, for the case where the phonons from the substrate are nonadiabatically coupled to the quantum dots, the inelastic dephasing process takes over. This switch-over is due to different elemental composition in quantum dots as compared to its substrate. We also provide unambiguous analysis as to understand why GaAs/AlGaAs quantum dots may only have pure dephasing while InAs/GaAs quantum dots give rise to the inelastic dephasing as the dominant mechanism. It is shown that the elemental composition plays an important role (of both quantum dots and substrate) in evaluating the dephasing mechanisms of quantum dots.
机译:通过使用电离能理论和量子绝热定理的适当限制,通过将量子点与衬底隔离开来,重新审查了有关量子点移相机制(在纯弹性和非弹性之间)的最新争议。当量子点中的声子与基板中的声子绝热地隔离时,弹性或纯相移成为主要机理。另一方面,对于来自基板的声子非绝热地耦合到量子点的情况,非弹性相移过程接管了。这种转换是由于与其衬底相比量子点中的元素组成不同。我们还提供了明确的分析,以了解为什么GaAs / AlGaAs量子点可能仅具有纯相移,而InAs / GaAs量子点却导致非弹性相移成为主要机理。结果表明,元素组成在评估量子点的相移机理中起着重要的作用(对于量子点和衬底而言)。

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