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首页> 外文期刊>Physica, B. Condensed Matter >Zero bias maximum of differential conductance in coupled quantum dots: The effect of interdot Coulomb interaction
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Zero bias maximum of differential conductance in coupled quantum dots: The effect of interdot Coulomb interaction

机译:耦合量子点中微分电导的零偏置最大值:点间库仑相互作用的影响

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摘要

In this paper, we present a theoretical study of correlated electronic transport through coupled double quantum dot (DQD) system attached to normal leads, using a generalised two impurity Anderson Hamiltonian in the presence of intra- and inter-dot Coulomb interactions. A generic formulation from which different structures, i.e. series, symmetric as well as asymmetric parallel and T-shape, can be obtained easily, is developed using Keldysh non-equilibrium Green functions method. The occupation numbers and correlators appearing in the formulation have been calculated in a self-consistent manner. A special attention is paid to investigate the ZBM in the differential conductance, which appears, develops and disappears over a particular range of interdot Coulomb interaction, in the configuration of interest. The ZBM is found to result from the renormalization of energy levels induced by the interdot Coulomb interaction and therefore an attempt has been made to understand it within the framework of local density of states. The interdot tunneling is found to enhance the effect of the interdot Coulomb interaction in inducing the ZBM in all the three configurations. Calculations for the T-shape configuration reveal that non-zero value of the interdot tunneling is an essential condition for the appearance of the ZBM in the differential conductance.
机译:在本文中,我们提出了一种理论研究,涉及通过耦合到正常引线的耦合双量子点(DQD)系统进行的相关电子传输,在存在点内和点间库仑相互作用的情况下,使用广义的两种杂质安德森·哈密顿量。使用Keldysh非平衡Green函数方法,可以容易地获得一种通用配方,从中可以轻松获得不同的结构,即串联,对称以及不对称的平行和T形。配方中出现的职业数和相关因子已经以自洽的方式进行了计算。要特别注意研究差动电导中的ZBM,它在感兴趣的构型下在特定的点间库仑相互作用范围内出现,发展和消失。发现ZBM是由点间库仑相互作用引起的能级重新规范化导致的,因此已尝试在局部状态密度的框架内理解ZBM。发现点间隧穿增强了在所有三种配置中诱导ZBM时点间库仑相互作用的作用。 T形构型的计算表明,点间隧穿的非零值是ZBM在微分电导中出现的必要条件。

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