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First-principles material design and perspective on semiconductor spintronics materials

机译:第一性原理材料设计和对半导体自旋电子学材料的展望

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We investigate the electronic structure and magnetic properties of III–V compound semiconductor based dilute magnetic semiconductors (DMS) from first-principles. The electronic structure of DMS is calculated by using the Korringa–Kohn–Rostoker coherent potential approximation (KKR-CPA) method in connection with the local density approximation (LDA). Describing the magnetic properties by a classical Heisenberg model, effective exchange interactions are calculated by applying magnetic force theorem for two impurities embedded in the CPA medium. With the calculated exchange interactions,T_C is estimated by using the mean field approximation, the random phase approximation and the Monte Carlo simulation. In the above compounds, the magnetic interactions are well described from double exchange picture. Due to the short-range interactions, high-T_C is difficult to achieve in the presently investigated materials. Based on the present results, two strategies towards high-T_C are proposed to realize useful DMS materials. One uses spinodal decomposition to realize high blocking temperature in super-paramagnetic blocking phenomena and the other uses co-doping method to realize high concentration doping of magnetic impurities for high-T_C.
机译:我们从第一原理出发研究基于III–V化合物半导体的稀磁半导体(DMS)的电子结构和磁性。 DMS的电子结构是通过使用Korringa–Kohn–Rostoker相干势近似(KKR-CPA)方法和局部密度近似(LDA)来计算的。通过经典的海森堡模型描述磁性,通过对嵌入在CPA介质中的两种杂质应用磁力定理来计算有效的交换相互作用。通过计算出的交换相互作用,可以使用平均场近似,随机相位近似和蒙特卡洛模拟来估算T_C。在上述化合物中,从双交换图可以很好地描述磁性相互作用。由于短程相互作用,在目前研究的材料中难以实现高T_C。基于目前的结果,提出了两种实现高T_C的策略,以实现有用的DMS材料。一种使用旋节线分解实现超顺磁阻塞现象中的高阻塞温度,另一种使用共掺杂方法实现高T_C的磁性杂质的高浓度掺杂。

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