Lattice location of the group V elements As and Sb in ZnO

摘要

The lattice locations of the potential p-type dopants arsenic and antimony in single-crystalline ZnO were studied by means of the electron emission channeling method following the implantation of radioactive ~(73)As and ~(124)Sb isotopes. The majority of the implanted As and Sb probe atoms was found to occupy substitutional Zn sites, with the possible fraction on substitutional O sites being at maximum a few percent. The obtained results illustrate the difficulty in introducing oversized group V impurities on O sites and thus put further into question whether these elements may act as simple chemical dopants in ZnO.