Trivacancy in silicon: A combined DLTS and ab-initio modeling study

摘要

Deep level transient spectroscopy and ab-initio modeling have been used for identification of energy levels and structure of trivacancy (V_3) in Si. It is found that in the neutral charge state the V_3 is bistable,with the “four fold” configuration being lower in energy than the (110) planar configuration. V_3 in the (110) planar configuration gives rise to two acceptor levels at E_c0.36 eV and E_c0.46 eV in the gap,while in the “four fold” configuration the defect has trigonal symmetry and an acceptor level at E_c0.075 eV.