Anomalous Hall effect in Cu and Fe codoped In2O3 and ITO thin films

摘要

We present a systematic study of the structure, magnetization, resistivity, and Hall effect proper-ties of pulsed laser deposited Fe- and Cu-codoped In2O3 and indium-tin-oxide (ITO) thin films. Both the films show a clear ferromagnetism and anomalous Hall effect at 300 K. The saturated magnetic moments are almost the same for the two samples, but their remanent moments M, and coercive fields H-C are quite different. M, and H-C values of ITO film are much smaller than that of In2O3. The ITO sample shows a typical semiconducting behavior in whole studied temperature range, while the In2O3 thin film is metallic in the temperature range between 147 and 285 K. Analysis of different conduction mechanisms suggest that charge carriers are not localized in the present films. The profile of the anomalous Hall effect vs. magnetic field was found to be identical to the magnetic hysteresis loops, indicating the possible intrinsic nature of ferromagnetism in the present samples.