Silicon nanoclusters formation in silicon dioxide by high power density electron beam

摘要

New method of silicon nanoclusters growth was proposed. Silicon nanoclusters are formed in silicon dioxide under high power density electron beam irradiation. The irradiated region of SiO_2 is overheating due to low heatconductivity. The temperature of overheating is depended on electron current density. It was estimated by Monte-Carlo method. This work was devoted to study of nanoclusters formation at different electron beam power density.