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Analytical solution for temperature field in electron and lattice sub-systems during heating of solid film

机译:固态膜加热过程中电子和晶格子系统温度场的解析解

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The analytical solution for non-equilibrium temperature field in solid substrate is presented. Closed form solutions for electron and lattice site temperature rise are obtained for a solid layer heated at the surface with a time-decaying intensity pulse. In the analytical solutions, a perturbation method of strained parameters is introduced. Temperature simulations are carried out for a gold layer with different thicknesses. It is found that increasing layer thickness lowers electron and lattice site temperatures at the surface. Electron temperature at the surface decays sharply with progressing heating period, which is more pronounced for thin layer. Moreover, lattice site temperature continues to rise despite reducing electron temperature in the surface region. The results obtained from the analytical solution for the lattice site temperature agrees well with the numerical predictions. (c) 2006 Elsevier B.V. All rights reserved.
机译:提出了固体基质中非平衡温度场的解析解。对于在表面随时间衰减强度脉冲加热的固体层,获得了用于电子和晶格位点温度升高的封闭形式的溶液。在解析解中,引入了应变参数的摄动方法。对具有不同厚度的金层进行了温度模拟。发现增加层厚度降低了表面上的电子和晶格位点温度。随着加热时间的延长,表面的电子温度急剧下降,这对于薄层来说更为明显。此外,尽管降低了表面区域中的电子温度,但晶格位点温度仍继续升高。从晶格点温度的解析解获得的结果与数值预测非常吻合。 (c)2006 Elsevier B.V.保留所有权利。

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