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Use of heteroaromatic spacers in isoindigo-benzothiadiazole polymers for ambipolar charge transport

机译:杂芳族间隔基在异靛蓝-苯并噻二唑聚合物中用于双极性电荷传输的用途

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Inspired by the outstanding charge-transport characteristics of poly(isoindigo-alt-benzothiadiazole) (PIIG-BT) in our previous study, herein we present two new polymers (PIIG-DTBT and PIIG-DSeBT) involving IIG and BT blocks constructed using five-membered heteroaromatic spacers such as thiophene (T) and selenophene (Se) and investigate the effects of the spacer groups on the optical, electrochemical, and charge-transport properties. As a consequence of the red-shifts induced by the more extended conjugation and enhanced intramolecular charge transfer (ICT), both PIIG-DTBT and PIIG-DSeBT show smaller bandgaps compared to PIIG-BT. Interestingly, the LUMO energy levels (-3.57 eV) for the two polymers are the same, but the HOMO levels (-5.39 and -5.26 eV for PIIG-DTBT and PIIG-DSeBT, respectively) clearly vary as a function of the structural modification of the spacers. In addition to the changes in their optical properties and energy levels induced by the incorporation of the spacers, ambipolar charge transport behaviors with hole and electron mobilities of up to 7.8 x 10(-2) and 3.4 x 10(-2) cm(2) V-1 s(-1), respectively, are observed for PIIG-DTBT films with highly ordered lamellar packing. This represents the second example of IIG-based polymers exhibiting ambipolar charge transport in OFETs reported to date.
机译:在我们之前的研究中,受聚(异靛蓝-alt-苯并噻二唑)(PIIG-BT)出色的电荷传输特性的启发,在此,我们介绍了两种新的聚合物(PIIG-DTBT和PIIG-DSeBT),其中涉及使用五种结构构建的IIG和BT嵌段-元杂芳族间隔基,例如噻吩(T)和硒烯(Se),并研究间隔基对光学,电化学和电荷传输性质的影响。由于共轭作用的延长和分子内电荷转移(ICT)的增强引起的红移,与PIIG-BT相比,PIIG-DTBT和PIIG-DSeBT均显示出较小的带隙。有趣的是,两种聚合物的LUMO能级(-3.57 eV)相同,但HOMO能级(PIIG-DTBT和PIIG-DSeBT分别为-5.39和-5.26 eV)明显随结构修饰而变化垫片。除了由于引入间隔基而引起的光学性质和能级变化之外,双极性电荷传输行为的空穴和电子迁移率分别高达7.8 x 10(-2)和3.4 x 10(-2)cm(2) )对于具有高度有序层状堆积的PIIG-DTBT薄膜,分别观察到V-1 s(-1)。这代表了迄今为止报道的在OFET中表现出双极性电荷传输的基于IIG的聚合物的第二个例子。

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