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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Unraveling the mechanism of 720 nm sub-band-gap optical absorption of a Ta3N5 semiconductor photocatalyst: a hybrid-DFT calculation
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Unraveling the mechanism of 720 nm sub-band-gap optical absorption of a Ta3N5 semiconductor photocatalyst: a hybrid-DFT calculation

机译:解析Ta3N5半导体光催化剂的720 nm亚带隙光吸收机理:混合DFT计算

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摘要

The Ta3N5 semiconductor photocatalyst possesses a 720 nm (about 1.72 eV) sub-band-gap optical absorption but the mechanism of this optical absorption is still controversial. In this study, the hybrid density functional theory calculations are performed to unravel the mechanism of 720 nm sub-band-gap optical absorption of Ta3N5. By studying the possible optical absorption initiated by the ON impurity and the V-N defect, we find that the 720 nm sub-band-gap optical absorption of Ta3N5 may be ascribed to the electron transition from V-N(center dot) to V-N(center dot center dot center dot). In addition, we propose that the 720 nm sub-band-gap optical absorption can be used to qualitatively evaluate the photocatalytic water splitting ability of Ta3N5.
机译:Ta 3 N 5半导体光催化剂具有720 nm(约1.72 eV)的子带隙光吸收,但这种光吸收的机理仍存在争议。在这项研究中,进行混合密度泛函理论计算以揭示Ta3N5的720 nm亚带隙光吸收机制。通过研究由ON杂质和VN缺陷引发的可能的光吸收,我们发现Ta3N5的720 nm子带隙光吸收可能归因于从VN(中心点)到VN(中心点中心)的电子跃迁。点中心点)。此外,我们建议可以使用720 nm的子带隙光吸收来定性评估Ta3N5的光催化水分解能力。

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