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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Enhanced field emission property of a novel Al2O3 nanoparticle-decorated tubular SiC emitter with low turn-on and threshold field
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Enhanced field emission property of a novel Al2O3 nanoparticle-decorated tubular SiC emitter with low turn-on and threshold field

机译:具有低导通和阈值场的新型Al2O3纳米粒子修饰管状SiC发射极的增强场发射特性

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摘要

We report a novel Al2O3 nanoparticle-decorated tubular SiC nanostructure, which shows a remarkable enhanced field emission property with low turn-on and threshold field, The formation of Al2O3 nanoparticle-decorated tubular SiC on Si substrates is achieved in one-step via simple heating evaporation process for the first time. The nanostructure consists of tubular SiC and the Al2O3 nanoparticles, which homogeneously decorate on the surface of the tubidar SiC with an average diameter of 7.8 nm and narrow diameter distribution. Moreover, compared with the same density and sized bare tubular SiC, the Al2O3 nanoparticle-decorated tubular SiC nanostructure has an obvious reduction in turn-on (from 8.8 to 2.4 V μm~(-1)) and threshold field (from 23.5 to 5.37 V μm~(-1)). The very low turn-on and threshold field is also comparable to that of carbon nanolubes, which indicates the Al2O3 nanoparticle-decorated tubular SiC is of huge potential application in future field emission display devices.
机译:我们报道了一种新型的Al2O3纳米粒子修饰的管状SiC纳米结构,其具有低导通和阈值场的显着增强的场发射性能,通过简单加热一步一步地在Si基板上形成了Al2O3纳米粒子修饰的管状SiC。首次进行蒸发过程。纳米结构由管状SiC和Al2O3纳米颗粒组成,它们均匀地装饰在微管SiC的表面上,平均直径为7.8 nm,且直径分布窄。此外,与相同密度和尺寸的裸露管状SiC相比,装饰有Al2O3纳米颗粒的管状SiC纳米结构的导通电场(从8.8 Vμm〜(-1))和阈值场(从23.5降低至5.37)明显降低。 Vμm〜(-1))。极低的导通和阈值场也可以与碳纳米润滑剂相媲美,这表明用Al2O3纳米颗粒修饰的管状SiC在未来的场发射显示设备中具有巨大的潜力。

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