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首页> 外文期刊>Synthetic Metals >Charge transport in 2,6-bis(5 '-hexyl-2,2 '-bithiophene-5-yl) naphthalene-based organic devices
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Charge transport in 2,6-bis(5 '-hexyl-2,2 '-bithiophene-5-yl) naphthalene-based organic devices

机译:2,6-双(5'-己基-2,2'-联噻吩-5-基)萘基有机器件中的电荷传输

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摘要

Organic semiconductor 2,6-bis(5'-hexyl-2,2'-bithiophene-5-yl)naphthalene (H2T26N) is employed as an active layer in organic field-effect transistors (OFETs) or as a hole-transport layer in organic light emitting diodes (OLEDs). In OFET device the p-type conductivity is confirmed and the hole mobility as high as 0.34 cm(2)/Vs is achieved. The emission spectrum of ITO/H2T26N/tris(8-quinolinolato) aluminum (Alq3)/Ca OLED shows emission peaks which cannot be ascribed to either the H2T26N or Alq3 layer. Through studies of photoluminescence spectra and electrochemical properties we demonstrate that the additional feature results from an exciplex at the H2T26N/Alq3 bilayer interface. (C) 2015 Elsevier B.V. All rights reserved.
机译:有机半导体2,6-双(5'-己基-2,2'-联噻吩-5-基)萘(H2T26N)被用作有机场效应晶体管(OFET)中的有源层或空穴传输层在有机发光二极管(OLED)中。在OFET器件中,可以确定p型电导率,并且空穴迁移率高达0.34 cm(2)/ Vs。 ITO / H2T26N / tris(8-quinolinolato)铝(Alq3)/ Ca OLED的发射光谱显示出不能归因于H2T26N或Alq3层的发射峰。通过研究光致发光光谱和电化学性质,我们证明了该附加特征是由H2T26N / Alq3双层界面处的激基复合物引起的。 (C)2015 Elsevier B.V.保留所有权利。

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