Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075℃. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22 mA/W for a 3 mm long Mach-Zehnder modulator of 2 × 10~(18) cm~(-3) doping concentration at -7.1 V bias voltage and 5.9 mA/W for a ring modulator of 1 × 10~(18) cm~(-3) doping concentration at -10 V bias voltage. The former is used to demonstrate data detection of up to 35 Gbits/s.
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机译：在离子注入的氧化硅波导中观察到了缺陷介导的亚带隙吸收，该波导在1075℃下会经历快速的热退火。有了这种效果，普通的载流子耗尽型硅调制器便具有了光功率监控的功能。对于在-7.1 V偏置电压下掺杂浓度为2×10〜（18）cm〜（-3）的3 mm长的Mach-Zehnder调制器，测得的响应度为22 mA / W，对于环形调制器为5.9 mA / W，掺杂度为2×10〜（18）cm〜（-3） -10 V偏压下的掺杂浓度为1×10〜（18）cm〜（-3）。前者用于演示高达35 Gbit / s的数据检测。
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