Blue-green to near-IR switching electroluminescence from Si-rich silicon oxideitride bilayer structures

摘要

Blue-green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxideitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19percent, and subsequently annealed at 1000 deg C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO_(2) layer. Charge transport analysis is reported and allows for identifying the origin of this two-wavelength switching effect.