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Quantum well micro-resonator optical modulator based on electrically controlled coupling

机译:基于电控耦合的量子阱微谐振器光调制器

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摘要

Micro-resonator optical modulators fabricated with Si/SiO_2 planar waveguides have been reported for the optical interconnect application and the modulation is achieved by control of the resonant frequency through resonator index change. In these devices, thermal control is used to adjust/stabilize the resonant frequency and the input coupling constant. In this paper, an III-V based micro-resonator is described in which the modulation is achieved through voltage control of the input coupling parameter and the resonator frequency is adjusted/stabilized through control of the resonator index. This approach offers significant advantages for integrated circuit based optical connectivity. The modulator performance is analyzed via FDTD simulation with refractive index profiles based on measured absorption parameters. The performance is confirmed via MATLAB and a circuit based model for HSPICE is developed and run in a transient simulator to confirm the modulator speed and eye diagram characteristics yielding an extinction ratio of 10.7 dB, a bandwidth of 31 GHz and a energy consumption < 2.5 fJ/bit for device dimensions of 28 × 4 μm~2.
机译:已经报道了用Si / SiO_2平面波导制造的微谐振器光学调制器用于光学互连应用,并且通过通过谐振器折射率变化来控制谐振频率来实现调制。在这些设备中,热控制用于调节/稳定谐振频率和输入耦合常数。在本文中,描述了一种基于III-V的微谐振器,其中通过输入耦合参数的电压控制来实现调制,并且通过控制谐振器指数来调整/稳定谐振器频率。该方法为基于集成电路的光连接性提供了显着的优势。调制器性能通过FDTD模拟进行分析,并基于测得的吸收参数使用折射率分布进行分析。通过MATLAB确认了性能,并开发了基于电路的HSPICE模型并在瞬态仿真器中运行,以确认调制器速度和眼图特性,从而产生了10.7 dB的消光比,31 GHz的带宽和小于2.5 fJ的能耗尺寸为28×4μm〜2的/ bit。

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