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High extinction ratio polarization beam splitter with multimode interference coupler on SOI

机译:SOI上具有多模干涉耦合器的高消光比偏振分束器

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摘要

A high extinction ratio polarization beam splitter based on multimode interference coupler has been obtained on silicon-on-insulator. The multimode interference coupler is designed by using quasi-state imaging theory, and fabricated with E-beam lithography and induced coupled plasma etching technology. The device has footprint of 8.16 μm × 1034 μm. The measured extinction ratios remain 45 dB for TE mode and 23 dB for TM mode at wavelength of 1.55 μm. The extinction ratio of more than 20 dB for TE mode and 15 dB for TM mode is observed covering the whole C-band.
机译:在绝缘体上硅上获得了基于多模干涉耦合器的高消光比偏振分束器。采用准态成像理论设计了多模干涉耦合器,并采用电子束光刻技术和感应耦合等离子体刻蚀技术进行了制造。该器件占板面积为8.16μm×1034μm。在1.55μm波长下,测得的消光比对于TE模式保持45 dB,对于TM模式保持23 dB。在整个C波段,TE模式的消光比大于20 dB,TM模式的消光比大于15 dB。

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