Indium nitride (InN) is much more difficult to prepare than other group III nitrides for its low thermal stability. Here, InN nanoplates are prepared by using In2O3, NaNH2 and sulfur as starting materials in a stainless steel autoclave at 190 degrees C. This method has the advantages of requiring a low temperature and without using an ammonia flow. Field-emission scanning electron microscope shows that the length of InN nanoplates is about 400 nm with the thickness of 50 nm. Finally, the formation mechanism is also investigated.
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机译：氮化铟（InN）由于其低的热稳定性而比其他III族氮化物更难制备。在此，以In 2 O 3，NaNH 2和硫为原料在190℃的不锈钢高压釜中制备InN纳米板。该方法具有需要低温且不使用氨流的优点。场发射扫描电子显微镜显示InN纳米板的长度约为400 nm，厚度为50 nm。最后，对形成机理进行了研究。
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