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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Surface charge density determination of single conical nanopores based on normalized ion current rectification
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Surface charge density determination of single conical nanopores based on normalized ion current rectification

机译:基于归一化离子电流整流的单个锥形纳米孔的表面电荷密度测定

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Current rectification is well known in ion transport through nanoscale pores and channel devices. The measured current is affected by both the geometry and fixed interfacial charges of the nanodevices. In this article, an interesting trend is observed in steady-state current-potential measurements using single conical nanopores. A threshold low-conductivity state is observed upon the dilution of electrolyte concentration. Correspondingly, the normalized current at positive bias potentials drastically increases and contributes to different degrees of rectification. This novel trend at opposite bias polarities is employed to differentiate the ion flux affected by the fixed charges at the substrate-solution interface (surface effect), with respect to the constant asymmetric geometry (volume effect). The surface charge density (SCD) of individual nanopores, an important physical parameter that is challenging to measure experimentally and is known to vary from one nanopore to another, is directly quantified by solving Poisson and Nernst-Planck equations in the simulation of the experimental results. The flux distribution inside the nanopore and the SCD of individual nanopores are reported. The respective diffusion and migration translocations are found to vary at different positions inside the nanopore. This knowledge is believed to be important for resistive pulse sensing applications because the detection signal is determined by the perturbation of the ion current by the analytes.
机译:电流整流在通过纳米级孔和通道装置的离子传输中是众所周知的。所测量的电流受纳米器件的几何形状和固定界面电荷的影响。在本文中,使用单个圆锥形纳米孔在稳态电流电势测量中观察到一个有趣的趋势。在稀释电解质浓度时观察到阈值低电导率状态。相应地,在正偏置电势下的归一化电流急剧增加,并有助于不同程度的整流。相对于恒定的不对称几何形状(体积效应),采用相反极性的这种新趋势来区分受基质-溶液界面固定电荷影响的离子通量(表面效应)。单个纳米孔的表面电荷密度(SCD)是一项重要的物理参数,难以通过实验测量,并且已知一个纳米孔至另一个纳米孔之间的差异,可以通过在实验结果的模拟中求解Poisson和Nernst-Planck方程来直接量化。报告了纳米孔内部的通量分布和单个纳米孔的SCD。发现各自的扩散和迁移易位在纳米孔内部的不同位置处变化。认为该知识对于电阻脉冲感测应用很重要,因为检测信号是由分析物对离子电流的扰动确定的。

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