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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Photosensor Based on an FET Utilizing a Biocomponent of Photosystem I for Use in Imaging Devices
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Photosensor Based on an FET Utilizing a Biocomponent of Photosystem I for Use in Imaging Devices

机译:基于FET的光电传感器,利用光电系统I的生物成分在成像设备中使用

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摘要

We have investigated a photosensor that consists of a field emission transistor (FET) utilizing the biocomponent of the photosystem I (PSI) protein complex for use in an imaging device. The PSI was immobilized on a gold electrode via the self-assembling monolayer (SAM) of 3-mercapto-1-propanesulfonic acid sodium salt to obtain a PSI-modified gold electrode. As for the PSI-modified gold electrode, the basic photoresponses originating from the excitation of PSI, including the photocurrent (106 nA) and the photoresponse of the open-circuit voltage (photo-V-oc: 28.6 mV), were characterized. Then, the PSI-modified gold electrode was linked to the gate of the FET using a lead line, and (he device was successfully driven by the photoelectric signals from the PSI like a voltage follower circuit. Further, we successfully demonstrated that the PSI-based FET acts as it photosensor in imaging devices.
机译:我们研究了一种由场致发射晶体管(FET)构成的光电传感器,该场效应晶体管利用了光电系统I(PSI)蛋白复合物的生物成分用于成像设备。通过3-巯基-1-丙烷磺酸钠盐的自组装单层(SAM)将PSI固定在金电极上,以获得PSI修饰的金电极。对于PSI修饰的金电极,表征了源自PSI激发的基本光响应,包括光电流(106nA)和开路电压的光响应(photo-V-oc:28.6mV)。然后,使用引线将PSI修饰的金电极连接到FET的栅极,并且(通过电压跟随器电路,它成功地通过来自PSI的光电信号驱动了器件。此外,我们成功地证明了PSI-基FET充当成像设备中的光电传感器。

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