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High-throughput realization of an infrared selective absorber/emitter by DUV microsphere projection lithography

机译:DUV微球投影光刻技术高通量实现红外选择性吸收体/发射体

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摘要

In this paper, we present a low-cost and high-throughput nanofabrication method to realize metasurfaces that have selective absorption/emission in the mid-infrared region of the electromagnetic spectrum. We have developed DUV projection lithography to produce arbitrary patterns with sub-80 nm feature sizes. As examples of practical applications, we experimentally demonstrate structures with single and double spectral absorption/emission features, and in close agreement with numerical simulation. The fundamental mechanism of perfect absorption is discussed as well. Selective infrared absorbers/emitters are critical elements in realizing efficient thermophotovoltaic cells and high-performance biosensors.
机译:在本文中,我们提出了一种低成本,高通量的纳米加工方法,以实现在电磁谱的中红外区域具有选择性吸收/发射的超颖表面。我们已经开发了DUV投影光刻技术,以产生特征尺寸小于80 nm的任意图案。作为实际应用的示例,我们通过实验演示了具有单光谱和双光谱吸收/发射特征的结构,并且与数值模拟非常吻合。还讨论了完美吸收的基本机理。选择性红外吸收剂/发射体是实现高效热光电电池和高性能生物传感器的关键要素。

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