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Influence of the surface termination on the light emission of crystalline silicon nanoparticles

机译:表面终止对结晶硅纳米粒子发光的影响

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The light emission properties of silicon crystalline nanoparticles (SiNPs) have been investigated using steady-state and time-resolved photoluminescence measurements carried out at 12 K and at room temperature. To enable a comparative study of the role of surface terminal groups on the optical properties, we investigated SiNPs-H ensembles with the same mean NP diameter but differing on the surface termination, namely organic-functionalized with 1-dodecene (SiNPs-C12) and H-terminated (SiNPs-H). We show that although the spectral dependence of the light emission is rather unaffected by surface termination, characterized by a single broad band peaking at similar to 1.64 eV, both the exciton recombination lifetimes and quantum yields display a pronounced dependence on the surface termination. Exciton lifetimes and quantum yields are found to be significantly lower in SiNPs-H compared SiNPs-C12. This difference is due to distinct non-radiative recombination probabilities resulting from inter-NP exciton migration, which in SiNPs-C12 is inhibited by the energy barriers imposed by the bulky surface groups. The surface groups of organic-terminated SiPs are responsible for the inhibition of inter-NP exciton transfer, yielding a higher quantum yield compared to SiNPs-H. The surface oxidation of SiNPs-C12 leads to the appearance of a phenomenon of an exciton transference from to the Si core to oxide-related states that contribute to light emission. These excitons recombine radiatively, explaining why the emission quantum of the organic-terminated SiNPs is the same after surface oxidation of SiNPs-C12.
机译:使用在12 K和室温下进行的稳态和时间分辨的光致发光测量,研究了晶体硅纳米粒子(SiNPs)的发光特性。为了能够比较研究表面端基在光学性质上的作用,我们研究了具有相同平均NP直径但表面终止不同的SiNPs-H集成体,即用1-十二碳烯(SiNPs-C12)和H端(SiNPs-H)。我们表明,尽管光发射的光谱依赖性不受表面终止的影响,表面终止的特征是单个宽带峰的峰值接近1.64 eV,但激子复合寿命和量子产率都显示出对表面终止的显着依赖性。发现SiNPs-H中的激子寿命和量子产率显着低于SiNPs-C12。这种差异是由于NP之间的激子迁移引起的不同的非辐射重组概率所致,而SiNPs-C12中的激子迁移受到了庞大的表面基团施加的能垒的抑制。与SiNPs-H相比,有机封端的SiPs的表面基团可抑制NP之间的激子转移,从而产生更高的量子产率。 SiNPs-C12的表面氧化会导致出现激子从激子转移到Si核到氧化物相关态的现象,这有助于发光。这些激子以辐射方式复合,这解释了为什么有机封端的SiNPs的发射量子在SiNPs-C12表面氧化后是相同的。

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