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Active current gating in electrically biased conical nanopores

机译:电偏置锥形纳米孔中的有源电流门控

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We observed that the ionic current through a gold/silicon nitride (Si3N4) nanopore could be modulated and gated by electrically biasing the gold layer. Rather than employing chemical modification to alter device behavior, we achieved control of conductance directly by electrically biasing the gold portion of the nanopore. By stepping through a range of bias potentials under a constant trans-pore electric field, we observed a gating phenomenon in the trans-pore current response in a variety of solutions including potassium chloride (KCl), sodium chloride (NaCl), and potassium iodide (KI). A computational model with a conical nanopore was developed to examine the effect of the Gouy-Chapman-Stern electrical double layer along with nanopore geometry, work function potentials, and applied electrical bias on the ionic current. The numerical results indicated that the observed modulation and gating behavior was due to dynamic reorganization of the electrical double layer in response to changes in the electrical bias. Specifically, in the conducting state, the nanopore conductance (both numerical and experimental) is linearly proportional to the applied bias due to accumulation of charge in the diffuse layer. The gating effect occurs due to the asymmetric charge distribution in the fluid induced by the distribution of potentials at the nanopore surface. Time dependent changes in current due to restructuring of the electrical double layer occur when the electrostatic bias is instantaneously changed. The nanopore device demonstrates direct external control over nanopore behavior via modulation of the electrical double layer by electrostatic biasing.
机译:我们观察到通过金/氮化硅(Si3N4)纳米孔的离子电流可以通过电偏置金层来进行调制和选通。我们没有采用化学修饰来改变器件的行为,而是直接通过电偏压纳米孔的金部分来实现电导的控制。通过在恒定的透孔电场下逐步通过一系列偏置电位,我们观察到了在包括氯化钾(KCl),氯化钠(NaCl)和碘化钾在内的各种溶液中的透孔电流响应中的门控现象(KI)。开发了具有圆锥形纳米孔的计算模型,以检查Gouy-Chapman-Stern电双层的影响以及纳米孔的几何形状,功函数电势以及对离子电流施加的电偏压。数值结果表明,观察到的调制和门控行为是由于电双层响应电偏压的变化而动态重组。具体地,在导电状态下,由于在扩散层中电荷的积累,纳米孔电导率(数值的和实验的)与施加的偏压成线性比例。由于纳米孔表面的电势分布引起流体中电荷的不对称分布,从而产生了门控效应。当静电偏压瞬时改变时,由于双电层的重组而导致电流随时间变化。纳米孔器件通过静电偏压对双电层的调制,展示了对纳米孔行为的直接外部控制。

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