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Selective exfoliation of single-layer graphene from non-uniform graphene grown on Cu

机译:从铜上生长的不均匀石墨烯中选择性剥落单层石墨烯

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摘要

Graphene growth on a copper surface via metal-catalyzed chemical vapor deposition has several advantages in terms of providing high-quality graphene with the potential for scale-up, but the product is usually inhomogeneous due to the inability to control the graphene layer growth. The non-uniform regions strongly affect the reliability of the graphene in practical electronic applications. Herein, we report a novel graphene transfer method that allows for the selective exfoliation of single-layer graphene from non-uniform graphene grown on a Cu foil. Differences in the interlayer bonding energy are exploited to mechanically separate only the top single-layer graphene and transfer this to an arbitrary substrate. The dry-transferred single-layer graphene showed electrical characteristics that were more uniform than those of graphene transferred using conventional wet-etching transfer steps.
机译:就提供高质量的石墨烯具有扩大规模的潜力而言,通过金属催化的化学气相沉积在铜表面上生长石墨烯具有几个优势,但是由于无法控制石墨烯层的生长,产品通常是不均匀的。在实际的电子应用中,不均匀区域强烈影响石墨烯的可靠性。本文中,我们报道了一种新颖的石墨烯转移方法,该方法可以从生长在铜箔上的不均匀石墨烯中选择性剥落单层石墨烯。利用层间键合能的差异仅机械分离顶部单层石墨烯,并将其转移到任意衬底上。干转移的单层石墨烯显示出比使用常规湿法蚀刻转移步骤转移的石墨烯更均匀的电学特性。

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