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Integration of tunable two-dimensional nanostructures on a chip by an improved nanosphere lithography method

机译:通过改进的纳米球光刻技术将可调二维纳米结构集成在芯片上

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By uniform infiltration of a different material into monolayered polystyrene colloidal crystals and by flexibly combining the two materials as etching masks, we demonstrate an improved. nanosphere lithography method that possesses the ability to produce a diverse range of tunable nano-patterns in a small area with good reproducibility. The factors that affect the infiltration height and uniformity are characterized and discussed. Annular gap arrays, close-packed ring arrays, and bowl arrays are demonstrated by this method. The geometry size of these nano-patterns can be tuned over the range 10 nm to similar to 500 nm with steps of similar to 5 nm during the fabrication progress. Formation mechanisms of the close-packed ring arrays are experimentally investigated. Because all the fabrication processes involved in this method are adaptable to sophisticated integrated circuit fabrication techniques, most of the nano-patterns produced by this method could be integrated on thin films, which is desirable for optics integration and array sensing.
机译:通过将一种不同的材料均匀渗透到单层聚苯乙烯胶体晶体中,并灵活地将这两种材料作为蚀刻掩模,我们证明了一种改进。纳米球面光刻法,具有在小面积内以良好的可重复性生产多种可调纳米图案的能力。表征和讨论了影响渗透高度和均匀性的因素。该方法演示了环形间隙阵列,密排环形阵列和碗形阵列。这些纳米图案的几何尺寸可以在制造过程中以类似于5 nm的步长在10 nm范围内调整到类似于500 nm。实验研究了密排环阵列的形成机理。由于该方法涉及的所有制造工艺都适用于复杂的集成电路制造技术,因此该方法生产的大多数纳米图案都可以集成在薄膜上,这对于光学集成和阵列感测而言是理想的。

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