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Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

机译:SiC / Si纳米晶体/ SiC夹层结构中带电效应的微观和宏观表征

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摘要

Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance-voltage (C-V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3-4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements.
机译:随后通过静电力显微镜和开尔文探针力显微镜(KPFM)对通过偏置的导电AFM尖端向SiC / Si纳米晶体/ SiC夹层结构中注入微观电荷进行表征。发现电荷注入和保留特性不仅受到Si纳米晶体/ SiC界面处的带偏移的影响,而且还受到Si衬底的掺杂类型的影响。另一方面,电容电压(C-V)测量研究了具有较厚SiC覆盖层的夹层结构的宏观充电效果,其中电荷是从Si基板注入的。计算出的宏观荷电密度是微观荷电密度的3-4倍,可能的原因是由于KPFM测量中的平均效应和检测延迟导致对微观荷电密度的低估。

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