The influence of fibril composition and dimension on the performance of paper gated oxide transistors

摘要

Paper electronics is a topic of great interest due the possibility of having lowcost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiberanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiberanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm~2 V~(-1) s~(-1), with an ION=IOFF ratio close to 105.