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High aspect ratio nano-fabrication of photonic crystal structures on glass wafers using chrome as hard mask

机译:使用铬作为硬掩模在玻璃晶片上高纵横比纳米加工光子晶体结构

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摘要

Wafer-scale nano-fabrication of silicon nitride (Si_xN_y) photonic crystal (PhC) structures on glass (quartz) substrates is demonstrated using a thin (30 nm) chromium (Cr) layer as the hard mask for transferring the electron beam lithography (EBL) defined resist patterns. The use of the thin Cr layer not only solves the charging effect during the EBL on the insulating substrate, but also facilitates high aspect ratio PhCs by acting as a hard mask while deep etching into the SixNy. A very high aspect ratio of 10:1 on a 60 nm wide grating structure has been achieved while preserving the quality of the flat top of the narrow lines. The presented nano-fabrication method provides PhC structures necessary for a high quality optical response. Finally, we fabricated a refractive index based PhC sensor which shows a sensitivity of 185 nm per RIU.
机译:使用薄的(30 nm)铬(Cr)层作为用于传输电子束光刻(EBL)的硬掩膜,证明了在玻璃(石英)衬底上的硅规模(SiC_xN_y)光子晶体(PhC)结构的晶圆级纳米加工。 )定义的抗蚀剂图案。薄Cr层的使用不仅解决了绝缘基板上的EBL期间的充电效应,而且还通过在深蚀刻到SixNy中的同时充当硬掩模来促进高纵横比PhCs。在保持窄线平顶质量的同时,在60 nm宽的光栅结构上实现了非常高的纵横比10:1。提出的纳米制造方法提供了高质量光学响应所必需的PhC结构。最后,我们制造了基于折射率的PhC传感器,该传感器对每个RIU的灵敏度为185 nm。

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