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Large-scale uniform Au nanodisk arrays fabricated via x-ray interference lithography for reproducible and sensitive SERS substrate

机译:通过X射线干涉光刻技术制造的大规模均匀金纳米盘阵列,用于可再现且灵敏的SERS基板

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摘要

Large-scale Au nanodisk arrays on Si substrate are successfully fabricated via x-ray interference lithography and followed by electron-beam vapor deposition. The Au nanodisk arrays exhibit a significant, uniform, and reproducible surface enhancement on Raman scattering signal, which enables the detection of R6G as low as 10~(?8)M with an enhancement factor of 10~6. Importantly, the Au nanodisk arrays SERS-active substrates with uniformly high sensitivity also have high reproducibility and stability. The diameters of the nanodisks and the inter-disk distance can be simply optimized to obtain high enhancement in Raman signal by varying exposure time and development time in XIL process. The electric fields of the Au nanodisks with various diameters and inter-disk distance simulated by the finite difference time domain (FDTD) techniques further confirm that the Raman signal enhancement of Au nanodisks is determined by the diameters of nanodisks and the inter-disk distance of nanodisks. The Au/Ag double-layer bimetal nanodisk arrays are also fabricated which show a significant increase in the Raman signal enhancement than that of the Au nanodisk arrays. XIL nanofabrication appears to be a feasible approach to prepare uniform and reproducible SERS-active substrates with high sensitivity for practical SERS applications.
机译:通过X射线光刻技术成功地在Si衬底上制造了大规模的Au纳米盘阵列,然后进行了电子束气相沉积。金纳米盘阵列在拉曼散射信号上显示出显着,均匀且可重现的表面增强,从而能够检测到低至10〜(?8)M的R6G,增强因子为10〜6。重要的是,具有均一的高灵敏度的金纳米盘阵列SERS活性基板也具有很高的重现性和稳定性。通过改变XIL工艺中的曝光时间和显影时间,可以简单地优化纳米盘的直径和盘间距离,以获得拉曼信号的高度增强。通过有限差分时域(FDTD)技术模拟的各种直径的Au纳米盘的电场和盘间距离进一步证实,Au纳米盘的拉曼信号增强取决于纳米盘的直径和盘间距离。纳米磁盘。还制造了Au / Ag双层双金属纳米磁盘阵列,与Au纳米磁盘阵列相比,其拉曼信号增强显着增加。 XIL纳米制造似乎是一种可行的方法,可以制备出具有高灵敏度的均匀且可重现的SERS活性基材,以用于实际的SERS应用。

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