Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: Control of the terahertz absorption energy trough the temperature dependent depolarization shift

摘要

In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k · p model.