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Graphene-based charge sensors

机译:基于石墨烯的电荷传感器

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We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane magnetic fields of up to 7 T and pulse frequencies of up to 20 MHz. By analyzing the step height in the charge detector's current at individual charging events in a nearby quantum dot, we determine the ideal operation conditions with respect to the applied charge detector bias. Average charge sensitivities of 1.3 × 10~(-3)e Hz~(-1/2) can be achieved. Additionally, we investigate the back action of the charge detector current on the quantum transport through a nearby quantum dot. By varying the charge detector bias from 0 to 4.5 mV, we can increase the Coulomb peak currents measured at the quantum dot by a factor of around 400. Furthermore, we can completely lift the Coulomb blockade in the quantum dot.
机译:我们讨论基于石墨烯纳米带的电荷传感器,并在存在外部磁场和施加到附近栅电极的高频脉冲的情况下,重点关注其功能。电荷检测器在最高7 T的面内磁场和最高20 MHz的脉冲频率下都能很好地工作。通过分析附近量子点中各个充电事件下电荷检测器电流的阶跃高度,我们可以确定相对于所施加电荷检测器偏置的理想工作条件。平均电荷灵敏度为1.3×10〜(-3)e Hz〜(-1/2)。此外,我们研究了电荷检测器电流对通过附近量子点的量子传输的反作用。通过将电荷检测器偏置从0改变为4.5 mV,我们可以将在量子点处测得的库仑峰值电流增加大约400倍。此外,我们可以完全解除量子点中的库仑阻塞。

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