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Evaluation of all-inorganic CdSe quantum dot thin films for optoelectronic applications

机译:用于光电应用的全无机CdSe量子点薄膜的评估

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Exchanging the original organic ligands of colloidal CdSe quantum dots (QDs) with inorganic metal chalcogenide SnS _4 ligands resulted in absorption peak redshifts and complete photoluminescence (PL) quenching in QD solids. The SnS _4-capped QDs, meanwhile, were able to retain strong excitonic absorption. After the ligand exchange, the ITO/QDs/Al structure showed much higher electrical conductivity and reduced space-charge limited current. Its photocurrent spectral response increased by over two orders of magnitude and closely resembled the absorption spectrum of the QDs. However, it was found that mild thermal treatment above 200°C transformed the SnS _4-capped QD film into to a more conductive assembly, degrading its absorption and photocurrent generation. These results suggest that the inorganic ligands considerably enhanced the inter-dot electronic coupling in QD solids, leading to facile charge separation and transport. Our study thus demonstrates the potential applicability of colloidal QDs with metal chalcogenide ligands processed at low temperatures for efficient photodetection and solar energy conversion.
机译:用无机金属硫属元素化物SnS _4配体交换胶体CdSe量子点(QD)的原始有机配体会导致吸收峰红移和QD固体中的完全光致发光(PL)猝灭。同时,由SnS _4封端的QD能够保留强烈的激子吸收。配体交换后,ITO / QDs / Al结构显示出更高的电导率和减小的空间电荷极限电流。它的光电流光谱响应增加了两个数量级以上,与量子点的吸收光谱非常相似。然而,发现在200°C以上的温和热处理将SnS -4封端的QD薄膜转变为导电性更高的组件,从而降低了其吸收能力和光电流生成能力。这些结果表明,无机配体大大增强了量子点固体中的点间电子耦合,从而导致电荷分离和传输变得容易。因此,我们的研究证明了胶体量子点与低温处理的金属硫族化物配体的潜在适用性,以进行有效的光电检测和太阳能转换。

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