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High-field electron transport in semiconducting zigzag carbon nanotubes

机译:半导体之字形碳纳米管中的高场电子传输

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摘要

Electron transport in semiconducting zigzag carbon nanotubes is studied by solving the Boltzmann transport equation using the single-particle Monte Carlo technique. The electronic band structure is based on a standard nearest-neighbour tight-binding parameterization, and the phonon spectrum is calculated using a fourth nearest-neighbour force constant model. The electronphonon scattering probabilities are calculated within a tight-binding formalism. The steady-state drift velocities for the semiconducting zigzag nanotubes (8, 0), (10, 0), (11, 0), (13, 0), and (25, 0) are computed as functions of electric field strength and temperature, and the results are analysed here. The results show the presence of negative differential resistance at high electric fields for some of the nanotubes. The drift velocity and the low-field mobility reach a maximum value of 4.67×10 ~7cms ~1 and4×10~ 4cm ~2V ~1s ~1, respectively, for a (25, 0) nanotube.
机译:通过使用单粒子蒙特卡洛技术求解玻尔兹曼输运方程,研究了半导体之字形碳纳米管中的电子输运。电子带结构基于标准的最近邻紧密结合参数化,并且使用第四近邻力常数模型计算声子谱。电子束的散射概率是在严格约束的形式主义内计算的。根据电场强度的函数计算半导体曲折纳米管(8,0),(10,0),(11,0),(13,0)和(25,0)的稳态漂移速度。温度,并在这里分析结果。结果表明,某些纳米管在高电场下存在负差分电阻。对于(25,0)纳米管,漂移速度和低场迁移率分别达到最大值4.67×10〜7cms〜1和4×10〜4cm〜2V〜1s〜1。

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