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Improved conversion efficiency of CdS quantum dots-sensitized TiO 2 nanotube array using ZnO energy barrier layer

机译:ZnO势垒层提高CdS量子点敏化TiO 2纳米管阵列的转换效率

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We report that the use of a chemically deposited ZnO energy barrier between a CdS quantum dot sensitizer and TiO_2 nanotubes (TNTs) can improve the efficiency of quantum dots-sensitized solar cells (QDSCs). The experimental results show that the formation of the ZnO layers over TNTs significantly improved the performances of the CdS QDSCs based on the TNTs electrodes. In particular, a maximum photoconversion efficiency of 4.6% was achieved for the CdS/ZnO/TNTs electrode under UV-visible light illumination, corresponding to an increase of 43.7% as compared to the CdS/TNTs electrode without the ZnO layers. The improved CdS QDSCs efficiency is attributed to the suppressed recombination of photoinjected electrons with redox ions from the electrolyte resulting from the ZnO energy barrier layers.
机译:我们报告说在CdS量子点敏化剂和TiO_2纳米管(TNTs)之间使用化学沉积的ZnO能垒可以提高量子点敏化太阳能电池(QDSCs)的效率。实验结果表明,在TNT上形成ZnO层可以显着改善基于TNT电极的CdS QDSC的性能。特别地,在紫外可见光照射下,CdS / ZnO / TNTs电极的最大光转换效率达到4.6%,与没有ZnO层的CdS / TNTs电极相比,增加了43.7%。 CdS QDSCs效率的提高归因于光注入电子与来自ZnO势垒层的电解质中的氧化还原离子的重组。

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